Cookies

Site-ul nostru foloseste cookies pentru a imbunatatii experienta de navigare si a oferii servicii mai usor de utilizat. Prin folosirea site-ului nostru va dati acordul ca ati citit si inteles termenii si conditiile, Info Cookies.

În curs de procesare...

STGYA120M65DF2AG, IGBT, 160A, 650V, 625W, MAX247-3, STMICROELECTRONICS

Denumire Produs: STGYA120M65DF2AG, STMICROELECTRONICS

COD: 91636


Preț: 68,99 RON

(Prețul include TVA)
Stoc Limitat

Producător : STMicroelectronics

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: MAX-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.65 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 160A
Pd - Power Dissipation: 625 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: STGYA120M65DF2AG
Qualification: AEC-Q101
Packaging: Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
 
 
ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala a produselor. Acest lucru nu schimba caracteristicile lor de baza.

PRODUSE ASOCIATE

 
FGH40T120SMD, IGBT, 1200V, 40A, TO247, INF...

55,48 RON (Prețul include TVA)

   
PSI25/06, semipunte, IGBT, 17A, 600V, 82W,...

124,00 RON (Prețul include TVA)

 
 
FP15R12W1T4P, IGBTx3, semipunte, termistor...

398,00 RON (Prețul include TVA)

   
SKM75GB17E4, semipunte, IGBT, 97A, 1700V, ...

578,00 RON (Prețul include TVA)

 

Lichidare Stoc