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SIRA01DP-T1, P-MOSFET, 30V, 60A, VISHAY

Denumire Produs: SIRA01DP-T1, VISHAY

COD: 96102


Preț: 13,58 RON

(Prețul include TVA)
In stoc
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: PowerPAK-SO-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 4.9 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Qg - Gate Charge: 56 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 62.5 W
Channel Mode: Enhancement
Tradename: TrenchFET, PowerPAK
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 6 ns
Series: SIR
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 15 ns
 
 
 
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