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Poza IGBT IXFH120N15P 120A/150V mica

IXFH120N25T, N-MOSFET, 120A, 250V, 890W, IXYS

Denumire Produs: IXFH120N25T, IXYS


Preț: 96,32 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: IXYS
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 250 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 180 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 890 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube
Brand: IXYS
Configuration: Single
Fall Time: 19 ns
Product Type: MOSFET
Rise Time: 16 ns
Series: IXFH120N25T
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 32 ns
 
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