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Tranzistoare N-MOSFET

IRFB7434, N-MOSFET 40V, 317A, 294W, TO220, INFINEON

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IRFB7434, N-MOSFET 40V, 317A, 294W, TO220, INFINEON

Denumire Produs: IRFB7434, INFINEON

COD: 81847

Preț: 12,60 RON

(Prețul include TVA)

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Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 40 V

Id - Continuous Drain Current: 317 A

Rds On - Drain-Source Resistance: 1.25 mOhms

Vgs th - Gate-Source Threshold Voltage: 2.2 V

Vgs - Gate-Source Voltage: 20 V

Qg - Gate Charge: 324 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Configuration: Single

Pd - Power Dissipation: 294 W

Channel Mode: Enhancement

Tradename: StrongIRFET

Packaging: Tube

Height: 15.65 mm

Length: 10 mm

Transistor Type: 1 N-Channel

Width: 4.4 mm

Brand: Infineon / IR

Forward Transconductance - Min: 211 S

CNHTS: 8541290000

Fall Time: 68 ns

HTS Code: 8541290095

MXHTS: 85412999

Product Type: MOSFET

Rise Time: 68 ns

Subcategory: MOSFETs

TARIC: 8541290000

Typical Turn-Off Delay Time: 115 ns

Typical Turn-On Delay Time: 24 ns

The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and di/dt capability

Aplicaţii

Motor Drive & Control, Power Management, Consumer Electronics

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala a produselor. Acest lucru nu schimba caracteristicile lor de baza.

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IRFB7434, N-MOSFET 40V, 317A, 294W, TO220, INFINEON

Denumire Produs: IRFB7434, INFINEON

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