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IXFH120N20P, N-MOSFET, 200V, 120A, 714W, IXYS

Denumire Produs: IXFH120N20P, IXYS

COD: XX


Preț: 88,35 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: IXYS
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 22 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 152 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 714 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube
Brand: IXYS
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 40 S
Height: 21.46 mm
Length: 16.26 mm
Product Type: MOSFET
Rise Time: 35 ns
Series: IXFH120N20P
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: PolarHT HiPerFET Power MOSFET
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 30 ns
Width: 5.3 mm
 
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