Cookies

Site-ul nostru foloseste cookies pentru a imbunatatii experienta de navigare si a oferii servicii mai usor de utilizat. Prin folosirea site-ului nostru va dati acordul ca ati citit si inteles termenii si conditiile, Info Cookies.

În curs de procesare...

CSD18563Q5AT, N-MOSFET, 60V, 100A, 116W, VSONP-8, TEXAS INSTRUMENTS

Denumire Produs: CSD18563Q5AT, TEXAS INSTRUMENTS

COD: 83069


Preț: 19,51 RON

(Prețul include TVA)
In stoc

CSD18563Q5AT, MOSFET Transistor, N Channel, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V 

Manufacturer: Texas Instruments 

Product Category: MOSFET 
RoHS:  Details  
Technology: Si 
Mounting Style: SMD/SMT 
Package/Case: VSONP-8 
Number of Channels: 1 Channel 
Transistor Polarity: N-Channel 
Vds - Drain-Source Breakdown Voltage: 60 V 
Id - Continuous Drain Current: 100 A 
Rds On - Drain-Source Resistance: 6.8 mOhms 
Vgs th - Gate-Source Threshold Voltage: 1.7 V 
Vgs - Gate-Source Voltage: 10 V 
Qg - Gate Charge: 15 nC 
Minimum Operating Temperature: - 55 C 
Maximum Operating Temperature: + 150 C 
Pd - Power Dissipation: 116 W 
Configuration: Single 
Channel Mode: Enhancement 
Tradename: NexFET 
Packaging: Cut Tape 
Packaging: Reel 
Height: 1 mm  
Length: 5.75 mm  
Series: CSD18563Q5A  
Transistor Type: 1 N-Channel Power MOSFET  
Type: NexFET Power MOSFET  
Width: 4.9 mm  
Brand: Texas Instruments  
Development Kit: TPS40170EVM-597  
Fall Time: 1.7 ns  
Product Type: MOSFET  
Rise Time: 6.3 ns  
 
Subcategory: MOSFETs  
Typical Turn-Off Delay Time: 11.4 ns  
Typical Turn-On Delay Time: 3.2 ns
 
ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala a produselor. Acest lucru nu schimba caracteristicile lor de baza.

Lichidare Stoc