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Componente electronice activeTranzistoareTranzistoare N-MOSFETSTW27N60M2, N-MOSFET, 600V, 20A, TO247-3, STMICROELECTRONICS
Componente electronice activeTranzistoareTranzistoare N-MOSFETSTW27N60M2, N-MOSFET, 600V, 20A, TO247-3, STMICROELECTRONICS
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 163 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 33 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 170 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: STW27N60M2-EP
Brand: STMicroelectronics
Configuration: Single
Fall Time: 6.3 ns
Product Type: MOSFET
Rise Time: 8.1 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 55.6 ns
Typical Turn-On Delay Time: 13.4 ns
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