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IXFH20N80P, N-MOSFET, 800V, 20A, 500W, TO247, IXYS

Denumire Produs: IXFH20N80Q

COD: 94154


Preț: 69,00 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: IXYS
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 520 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 86 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube
Configuration: Single
Height: 21.46 mm
Length: 16.26 mm
Series: IXFH20N80
Transistor Type: 1 N-Channel
Type: PolarHV HiPerFET Power MOSFET
Width: 5.3 mm
Brand: IXYS
Forward Transconductance - Min: 14 S
Fall Time: 24 ns
Product Type: MOSFET
Rise Time: 24 ns
 
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 85 ns
 
 
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