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STGWT80V60F

STGWT80H65DFB, IGBT, HIGH SPEED, 120A, 600V, 469W, TO3P, STMICROELECTRONICS

Denumire Produs: STGWT80H65DFB, STMICROELECTRONICS


Preț: 58,80 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-3P
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.85 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 120 A
Pd - Power Dissipation: 469 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: STGWT80V60DF
Packaging: Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
 
Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM 
 
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