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SQJ469EP-T1_GE3, P-MOSFET, 80V, 32A, VISHAY

Denumire Produs: SQJ469EP-T1_GE3, VISHAY

COD: 97100


Preț: 22,44 RON

(Prețul include TVA)
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Product Attribute Attribute Value Search Similar
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: PowerPAK-SO-8-4
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 32 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 101 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 100 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Configuration: Single
Height: 1.04 mm
Length: 6.15 mm
Series: SQ
Transistor Type: 1 P-Channel
Width: 5.13 mm
Brand: Vishay / Siliconix
Forward Transconductance - Min: 35 S
Fall Time: 40 ns
Product Type: MOSFET
Rise Time: 16 ns
 
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 150 ns
Typical Turn-On Delay Time: 16 ns
 
 
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