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Tranzistoare IGBT

NGTB35N60FL2WG, IGBT, 70A, 600V, 300W, TO247, ON SEMICONDUCTOR

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Manufacturer: ON Semiconductor

Product Category: IGBT Transistors

RoHS: Details

Technology: Si

Package/Case: TO-247-3

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Maximum Gate Emitter Voltage: 20 V

Continuous Collector Current at 25 C: 70 A

Pd - Power Dissipation: 300 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Packaging: Tube

Continuous Collector Current Ic Max: 70 A

Brand: ON Semiconductor

Gate-Emitter Leakage Current: 200 nA

Product Type: IGBT Transistors

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NGTB35N60FL2WG, IGBT, 70A, 600V, 300W, TO247, ON SEMICONDUCTOR

Denumire Produs: NGTB35N60FL2WG, ON SEMICONDUCTOR

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