ON SEMICONDUCTOR - MUR8100EG - DIODE, ULTRAFAST, 8A, 1000V
Diode Type: Fast Recovery
Diode Configuration: Single
Repetitive Reverse Voltage Vrrm Max: 1kV
Forward Current If(AV): 8A
Forward Voltage VF Max: 1.8V
Reverse Recovery Time trr Max: 75ns
Forward Surge Current Ifsm Max: 100A
Operating Temperature Min: -65°C
Operating Temperature Max: 175°C
Diode Case Style: TO-220AC
No. of Pins: 2
Current Ifsm: 100A
Device Marking: MUR8100E
Forward Current If Max: 8A
Forward Voltage: 1.8V
Junction Temperature Tj Max: 175°C
Operating Temperature Range: -65°C to +175°C
Package / Case: TO-220AC
Reverse Recovery Time trr Typ: 75ns
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