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30N60

IXTQ30N60P, N-MOSFET, 600V, 30A, 540W, TO3P, IXYS

Denumire Produs: IXTQ30N60P, IXYS

COD: 96669


Preț: 38,96 RON

(Prețul include TVA)
Stoc Limitat
Manufacturer: IXYS
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3P-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 240 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 540 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 20.3 mm
Length: 15.8 mm
Series: IXTQ30N60
Transistor Type: 1 N-Channel
Width: 4.9 mm
Brand: IXYS
Forward Transconductance - Min: 25 S
Fall Time: 25 ns
Product Type: MOSFET
Rise Time: 20 ns
 
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 29 ns
 
 
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