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Tranzistoare N-MOSFET

IXTK120N25P, N-MOSFET; 250V; 120A, 700W

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IXTK120N25P, N-MOSFET; 250V; 120A, 700W

Denumire Produs: IXTK120N25P, IXYS

COD: 92613

Preț: 71,05 RON

(Prețul include TVA)

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Furnizor:IXYS SEMICONDUCTOR

MOSFET, N, TO-264

Manufacturer: IXYS

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-264-3

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 250 V

Id - Continuous Drain Current: 120 A

Rds On - Drain-Source Resistance: 24 mOhms

Vgs th - Gate-Source Threshold Voltage: 5 V

Vgs - Gate-Source Voltage: 20 V

Qg - Gate Charge: 185 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Configuration: Single

Channel Mode: Enhancement

Tradename: PolarHT

Packaging: Tube

Height: 26.16 mm

Length: 19.96 mm

Series: IXTK120N25

Transistor Type: 1 N-Channel

Type: PolarHT Power MOSFET

Width: 5.13 mm

Brand: IXYS

Forward Transconductance - Min: 50 S

Fall Time: 33 ns

Pd - Power Dissipation: 700 W

Rise Time: 33 ns

The IXTK120N25P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.

International standard packages

Avalanche rating

Low package inductance

Easy to mount

Space saving

Aplicaţii

Power Management, Motor Drive & Control, Robotics

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IXTK120N25P, N-MOSFET; 250V; 120A, 700W

Denumire Produs: IXTK120N25P, IXYS

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