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IRLD110, N-MOSFET, 100V, 1A, DIP4, INFINEON

Denumire Produs: IRLD110, INFINEON

COD: 43479


Preț: 5,88 RON

(Prețul include TVA)
In stoc
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: DIP-4
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 1 A
Rds On - Drain-Source Resistance: 540 mOhms
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 6.1 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 1.3 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 17 ns
Forward Transconductance - Min: 1.3 S
Product Type: MOSFET
Rise Time: 4.7 ns
2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 9.3 ns
 
 
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