IRFBG30PBF / Transistor N-MOSFET 1000V 3,1A 125W TO220AB
Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1kV
Continuous Drain Current Id: 3.1A
Drain Source On State Resistance: 5ohm
On Resistance Rds(on): 5ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 125W
Power Dissipation: 125W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Qualification: -
Product Range: IRFBG30 Series
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