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IPD100N06S4, N-MOSFET, 60V, 100A, DPAK, 150W, INFINEON

Denumire Produs: IPD100N06S4, INFINEON

COD: 95931


Preț: 11,90 RON

(Prețul include TVA)
In stoc
Manufacturer: Infineon 
Product Category: MOSFET 
RoHS:  Details  
Technology: Si 
Mounting Style: SMD/SMT 
Package/Case: TO-252-3 
Number of Channels: 1 Channel 
Transistor Polarity: N-Channel 
Vds - Drain-Source Breakdown Voltage: 60 V 
Id - Continuous Drain Current: 100 A 
Rds On - Drain-Source Resistance: 1.7 mOhms 
Vgs th - Gate-Source Threshold Voltage: 3 V 
Vgs - Gate-Source Voltage: 20 V 
Qg - Gate Charge: 91 nC 
Minimum Operating Temperature: - 55 C 
Maximum Operating Temperature: + 175 C 
Pd - Power Dissipation: 150 W 
Configuration: Single 
Channel Mode: Enhancement 
Qualification: AEC-Q101 
Tradename: OptiMOS 
Packaging: Cut Tape 
Packaging: MouseReel 
Packaging: Reel 
Height: 2.3 mm  
Length: 6.5 mm  
Series: OptiMOS-T2  
Transistor Type: 1 N-Channel  
Width: 6.22 mm  
Brand: Infineon Technologies  
Fall Time: 24 ns  
Product Type: MOSFET  
Rise Time: 12 ns  
Subcategory: MOSFETs  
Typical Turn-Off Delay Time: 26 ns  
Typical Turn-On Delay Time: 23 ns  
Part # Aliases: IPD100N04S402ATMA1 IPD1N4S42XT SP000646184
 
 
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