FGL60N100BNTD

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Componente electronice active

Tranzistoare

Tranzistoare IGBT

FGL60N100BNTD, IGBT, FAST, 60A, 1000V, TO246, ONSEMI

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Furnizor: FAIRCHILD SEMICONDUCTOR

RoHS : Da
Descriere
IGBT, NPT, TO-264
Transistor Type:IGBT
DC Collector Current:60A
Max Voltage Vce Sat:2.9V
Max Power Dissipation:180W
Collector-to-Emitter Breakdown Voltage:1000V
Operating Temperature Range:-55C to +150C
Transistor Case Style:TO-264
SVHC 2:Cobalt dichloride
Case Style:TO-264
Current Ic @ Vce Sat:60A
Max Current Ic Continuous a:60A
Power Dissipation:180W
Power Dissipation Pd:180W
Pulsed Current Icm:120A
Rise Time:320ns
Termination Type:Through Hole
Transistor Polarity:NPN
Voltage Vces:1000V
SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

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FGL60N100BNTD, IGBT, FAST, 60A, 1000V, TO246, ONSEMI

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