Cookies

Site-ul nostru foloseste cookies pentru a imbunatatii experienta de navigare si a oferii servicii mai usor de utilizat. Prin folosirea site-ului nostru va dati acordul ca ati citit si inteles termenii si conditiile, Info Cookies.

În curs de procesare...

IGB15N65S5, IGBT, 650V, 23A, D2PAK, INFINEON

Denumire Produs: IGB15N65S5ATMA1, INFINEON

COD: 88427


Preț: 13,60 RON

(Prețul include TVA)
In stoc
Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-263-3
Mounting Style: SMD/SMT
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 35 A
Pd - Power Dissipation: 105 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Packaging: Cut Tape
Packaging: Reel
Continuous Collector Current Ic Max: 35 A
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Part # Aliases: IGB15N65S5 SP001502560
 
 
ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala a produselor. Acest lucru nu schimba caracteristicile lor de baza.

Lichidare Stoc