FGA50T65SHD, IGBT, 100A, 650V, 319W, TO3P, INFINEON

Manufacturer: Fairchild Semiconductor

Product Category: IGBT Transistors , Trench Field Stop

RoHS: RoHS Compliant Details

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.14 V

Maximum Gate Emitter Voltage: 30 V

Continuous Collector Current at 25 C: 100 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 319 W

Mounting Style: Through Hole

Package / Case: TO-3PN

Maximum Operating Temperature: + 175 C

Packaging: Tube

Brand: Fairchild Semiconductor

Continuous Collector Current Ic Max: 100 A

Minimum Operating Temperature: - 55 C

This Insulated Gate Bipolar Transistor (IGBT) use

advanced Field Stop Trench Technology. It offer

lower losses and higher energy efficiency for

application such as

Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM

Welder, UPS, Solar Inverter and

other high Frequency Inverter System.

ATENTIE: Imaginile produselor au numai titlu indicativ si pot diferi de imaginea reala.

PRODUSE ASOCIATE

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FGA50T65SHD, IGBT, 100A, 650V, 319W, TO3P, INFINEON