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FGA50T65SHD, IGBT, 100A, 650V, 319W, TO3P, INFINEON

Denumire Produs: FGA50T65SHD

COD: 86992


Preț orientativ: 54,15 RON

Manufacturer: Fairchild Semiconductor
Product Category: IGBT Transistors , Trench Field Stop
RoHS: RoHS Compliant Details
 
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.14 V
Maximum Gate Emitter Voltage: 30 V
Continuous Collector Current at 25 C: 100 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 319 W
Mounting Style: Through Hole
Package / Case: TO-3PN
Maximum Operating Temperature: + 175 C
Packaging: Tube
Brand: Fairchild Semiconductor
Continuous Collector Current Ic Max: 100 A
Minimum Operating Temperature: - 55 C
 
This Insulated Gate Bipolar Transistor (IGBT) use
advanced Field Stop Trench Technology. It offer
lower losses and higher energy efficiency for
application such as
Utilizare: invertor solar, aparate sudura, sursa PFC, TELECOM 
 
Welder, UPS, Solar Inverter and
other high Frequency Inverter System.
 
 
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