Livrare
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Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 20.6 A
Rds On - Drain-Source Resistance: 190 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Qg - Gate Charge: 82 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 39 W
Channel Mode: Enhancement
Tradename: SuperFET II
Packaging: Tube
Configuration: Single
Height: 16.07 mm
Length: 10.36 mm
Series: FCPF190N60E
Transistor Type: 1 N-Channel
Width: 4.9 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 20 S
Fall Time: 40 ns
Product Type: MOSFET
Rise Time: 38 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 212 ns
Typical Turn-On Delay Time: 56 ns
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