Manufacturer: NXP 
	Product Category: RF Bipolar Transistors 
	RoHS:  Details 
	Transistor Type: Bipolar Wideband 
	Technology: Si 
	Transistor Polarity: NPN 
	Operating Frequency: 10.5 GHzMHz 
	DC Collector/Base Gain hFE Min: 60 
	Collector- Emitter Voltage VCEO Max: 16 V 
	Emitter- Base Voltage VEBO: 2 V 
	Continuous Collector Current: 5 mA 
	Minimum Operating Temperature: - 40 C 
	Maximum Operating Temperature: + 150 C 
	Configuration: Single 
	Mounting Style: SMD/SMT 
	Package/Case: SOT143B-4 
	Packaging: Cut Tape 
	Packaging: Reel 
	Collector- Base Voltage VCBO: 24 V 
	DC Current Gain hFE Max: 200 
	Operating Temperature Range: - 40 C to + 150 C 
	Type: Wideband RF Transistor 
	Brand: NXP Semiconductors 
	Gain Bandwidth Product fT: 10.5 GHz 
	Maximum DC Collector Current: 50 mA 
	Pd - Power Dissipation: 450 mW 
	Product Type: RF Bipolar Transistors
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