Manufacturer: NXP
Product Category: RF Bipolar Transistors
RoHS: Details
Transistor Type: Bipolar Wideband
Technology: Si
Transistor Polarity: NPN
Operating Frequency: 10.5 GHzMHz
DC Collector/Base Gain hFE Min: 60
Collector- Emitter Voltage VCEO Max: 16 V
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 5 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Mounting Style: SMD/SMT
Package/Case: SOT143B-4
Packaging: Cut Tape
Packaging: Reel
Collector- Base Voltage VCBO: 24 V
DC Current Gain hFE Max: 200
Operating Temperature Range: - 40 C to + 150 C
Type: Wideband RF Transistor
Brand: NXP Semiconductors
Gain Bandwidth Product fT: 10.5 GHz
Maximum DC Collector Current: 50 mA
Pd - Power Dissipation: 450 mW
Product Type: RF Bipolar Transistors
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