BC109C Bipolar (BJT) Single Transistor, Low Noise, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 800 hFE
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 25V
Transition Frequency ft: 150MHz
Power Dissipation Pd: 600mW
DC Collector Current: 200mA
DC Current Gain hFE: 800hFE
Transistor Case Style: TO-18
No. of Pins: 3Pins
Operating Temperature Max: 200°C
Aplicaţii
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
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